Recent progress and future developments in EB mask writing for X-ray lithography

Author

Nakayama, Yoshinori

Author_Institution

Super-fine SR Lithography Lab., Assoc. of Super-Adv. Electron. Technol., Atsugi, Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

8

Abstract

Proximity X-ray lithography is one of the most promising candidate for mass production of the next generation ULSI devices. Among the key technologies of proximity X-ray lithography, fine and precise X-ray mask fabrication is most important issue. According to SIA Roadmap high-accurate image placement and CD control within 10 nm of X-ray mask are required for 0.1-/spl mu/m ULSI device fabrication. Therefore a great deal of developments should be achieved for X-ray mask fabrication which was contained mask materials and mask-fabrication processes including pattern delineation using electron-beam (EB) writer. Especially improvement in EB mask writing is indispensable for high-accurate image placement and CD control. In this paper, recent progress and future developments in EB mask writing for X-ray lithography are described.

Keywords

X-ray masks; electron beam lithography; proximity effect (lithography); technological forecasting; CD control; ULSI device; X-ray mask fabrication; electron beam writing; image placement; proximity X-ray lithography; Fabrication; Laboratories; Mass production; Optical interferometry; Strontium; Thermal management; Ultra large scale integration; Writing; X-ray imaging; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797450

Filename

797450