Title :
High density metal dot arrays formed by electron beam induced nucleation method
Author :
Tsutsui, K. ; Himura, A. ; Mochizuki, M. ; Kawasaki, K.
Author_Institution :
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Artificial site control of quantum dots formed by self-assemble like processes is very attractive. Previously, we proposed the method in which surface of an epitaxial CaF/sub 2/ film was modified by focused electron beam exposure and a Ga droplet grew on the each exposed site by preferential nucleation of migrating Ga atoms. In this paper, we improved the process to obtain high resolution, and obtained uniform and high density Ga dot arrays where diameter of each dots was 10nm and period was less than 20nm were formed.
Keywords :
focused ion beam technology; gallium; nucleation; quantum dots; self-assembly; 10 nm; 20 nm; CaF/sub 2/; Ga; Ga droplet; electron beam induced nucleation method; epitaxial CaF/sub 2/ film; high density metal dot arrays; quantum dots; self-assembly; Atomic beams; Atomic layer deposition; Electron beams; Epitaxial growth; Molecular beam epitaxial growth; Optical arrays; Quantum dots; Surface cleaning; Surface contamination; US Department of Transportation;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797458
