DocumentCode
3220590
Title
Spatial distribution of mask-scattered electrons through scattering stencil mask
Author
Yamashita, H. ; Manako, S. ; Nomura, E. ; Nakajima, K. ; Nozue, H.
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear
1999
fDate
6-8 July 1999
Firstpage
30
Lastpage
31
Abstract
Electron-beam (EB) projection methods, such as SCALPEL and PREVAIL are among the candidates for next generation lithography. In these methods, EB masks are used to gain high throughput of the exposure systems. Absorber or scatterer combining with opening or membrane of those masks are structured to produce an image contrast on the wafer.
Keywords
electron beam lithography; electron resists; PREVAIL; SCALPEL; electron-beam projection methods; high throughput; image contrast; mask-scattered electrons; next generation lithography; scattering stencil mask; spatial distribution; Biomembranes; Computational modeling; Electron beams; Laboratories; Lithography; National electric code; Proximity effect; Resists; Scattering; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797461
Filename
797461
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