Scanning tunneling microscopy study of annealing effects on Si nanoscaled pn junctions formed by ion implantation

Author

Fukutome, Hidenobu ; Hasegawa, Shigehiko ; Okui, Toshiko ; Nakashima, Hisao ; Aoyama, Takayuki ; Arimoto, Hiroshi

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

48

Lastpage

49

Abstract

In this study, we investigate the effect of annealing a sample on the microscopic variation of the bulk electronic properties of nanoscaled pn junctions formed on an Si(001) surface, with the use of STM/STS. All experiments were performed on nanoscaled planar pn junctions formed on p-type Si(001) substrates, in which BF₂ ions were implanted to increase the carrier concentration after their surfaces were covered with oxide layers 5 nm thick

Keywords

annealing; boron compounds; carrier density; elemental semiconductors; ion implantation; nanostructured materials; p-n junctions; scanning tunnelling microscopy; scanning tunnelling spectroscopy; semiconductor doping; silicon; 5 nm; BF/sub 2/ ions; STM/STS; Si; Si nanoscaled pn junctions; Si:BF/sub 2/; annealing effects; carrier concentration; ion implantation; nanoscaled planar pn junctions; nanoscaled pn junctions; oxide layers; scanning tunneling microscopy; Annealing; Atomic measurements; Impurities; Ion implantation; Laboratories; Large scale integration; Microscopy; Textile industry; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797470

Filename

797470