New capabilities of OBIRCH method for fault localization and defect detection

Author

Nikawa, Kiyoshi ; Inoue, Shoji

Author_Institution

Device A&E Technol. Center, NEC Corp., Japan

fYear

1997

fDate

17-19 Nov 1997

Firstpage

214

Lastpage

219

Abstract

We have improved the optical beam induced resistance change (OBIRCH) method so as to detect (1) a current path as small as 10-50 μA from the rear side of a chip, (2) current paths in silicide lines as narrow as 0.2 μm. (3) high-resistivity Ti-depleted polysilicon regions in 0.2 μm wide silicide lines, and (4) high-resistivity amorphous thin layers as thin as a few nanometers at the bottoms of vias. All detections were possible even in observation areas as wide as 5 mm×5 mm. The physical causes of these detections were characterized by focused ion beam and transmission electron microscopy

Keywords

electric current measurement; fault location; integrated circuit metallisation; integrated circuit testing; measurement by laser beam; titanium compounds; voids (solid); 0.2 mum; 10 to 50 muA; 5 mm; OBIRCH method; Si; Ti-depleted polysilicon regions; TiN-Al; TiSi; current path; defect detection; fault localization; focused ion beam; high-resistivity amorphous thin layers; optical beam induced resistance change; silicide lines; transmission electron microscopy; Amorphous materials; Artificial intelligence; Electrons; Fault detection; Laser beams; Laser transitions; National electric code; Optical beams; Optical microscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Symposium, 1997. (ATS '97) Proceedings., Sixth Asian

Conference_Location

Akita

ISSN

1081-7735

Print_ISBN

0-8186-8209-4

Type

conf

DOI

10.1109/ATS.1997.643961

Filename

643961