DocumentCode
3221043
Title
Novel dual working organic bottom anti-reflective coating for 193, 248 nm lithography
Author
Jung, Min-Ho ; Hong, Sung-Eun ; Kim, Jong-Kook ; Kim, Jin-Soo ; Jung, Jae-Chang ; Lee, Geunsu ; Kim, Hyeong-Soo ; Baik, Ki-Ho ; Choi, Il-Hyun
Author_Institution
Semicond. Adv. Res. Div., Hyundai Electron. Ind. Co. Ltd., Kyungki, South Korea
fYear
1999
fDate
6-8 July 1999
Firstpage
78
Lastpage
79
Abstract
In the lithographic processing, application of a bottom anti-reflective coating (BARC) has proven to provide a number of benefits, such as elimination of reflective notching generated by reflections from highly reflective substrates, reduced swing effects caused by thin film interference, and therefore improved line-width control. To achieve such benefits, the organic BARC materials should have strong absorption at the exposure wavelength, high etch rate and matching to commercial chemically amplified resist. In design concept, the formulation of organic BARC material requires a minimum of two functional parts i.e., a chromophore to control the reflection and a cross-linking part to avoid intermixing with resist cast on it. In this paper, we report the performance of new organic BARC materials designed to work for lithographic applications at 248 nm as well as 193 nm simultaneously.
Keywords
antireflection coatings; organic compounds; photoresists; ultraviolet lithography; 193 nm; 248 nm; DUV lithography; chemically amplified resist; chromophore; cross-linking structure; organic bottom antireflective coating; Absorption; Coatings; Etching; Interference elimination; Organic chemicals; Organic materials; Reflection; Resists; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797485
Filename
797485
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