Slanted reflection gratings on gallium arsenide

Author

Cameron, Thomas P. ; Hunt, William D.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

1

fYear

1997

fDate

5-8 Oct 1997

Firstpage

11

Abstract

In this paper we present the first experimental study of the behavior of a slanted reflector array on {100}-cut, ⟨110⟩-propagating GaAs. The thorough examination of both Al stripes and grooves on GaAs unveiled previously unknown information about the behavior of slanted gratings on (100)-cut GaAs. We discovered that etched grooves provide a strong reflection coefficient (C=0.29) while Al stripes do not (C=0.014). These data measurements of the reflection characteristics for slanted gratings on GaAs. Potential device applications include an ultra-low power ACT device which does not require an IDT

Keywords

III-V semiconductors; aluminium; diffraction gratings; gallium arsenide; surface acoustic waves; surface topography; ultrasonic arrays; ultrasonic reflection; ⟨110⟩-propagating GaAs; (100)-cut GaAs; Al stripes; GaAs; GaAs-Al; SAW; etched grooves; gallium arsenide; grooves; slanted gratings; slanted reflection gratings; slanted reflector array; strong reflection coefficient; ultra-low power ACT device; Acoustic devices; Acoustic reflection; Acoustic waves; Artificial intelligence; Frequency; Gallium arsenide; Gratings; Microelectronics; Power engineering and energy; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1997. Proceedings., 1997 IEEE

Conference_Location

Toronto, Ont.

ISSN

1051-0117

Print_ISBN

0-7803-4153-8

Type

conf

DOI

10.1109/ULTSYM.1997.662970

Filename

662970