DocumentCode
3221242
Title
The nature of langasite crystal´s coloration
Author
Dubovik, Mikhail F. ; Katrunov, K.A. ; Korshikova, Tatyana I.
Author_Institution
Inst. for Single Crystals, Acad. of Sci., Kharkov, Ukraine
fYear
1995
fDate
31 May-2 Jun 1995
Firstpage
638
Lastpage
641
Abstract
La3Ga5SiO14 (LGSO) crystals grown from stoichiometric starting material are characterized by the absorption band edge in the UV-region at wavelengths beginning with λ=0.29 μm, the existence of absorption bands with λmax=0.36, 2.9, 3.75 μm, as well as by ρ>10 12 Ohm*cm, εy<25, εz<58 and tgδ<0.002. The presence of 10-3-10-2 mass% of rhodium in the crystals lead to the appearance of an absorption band with λmax=0.58 μm. Absorption at the said wavelength increases while heating the samples at T>623 K in electric field with E>400 V/cm. In this case ρ decreases by 100-1000 times, tgδ increased by an order. The band at λ=0.58 μm disappears if the colored samples are annealed in hydrogen at 973 K and is restored by heating the colorless samples in oxygen or air above 1173 K; the intensity of the absorption band of the OH-group (λ=2.9 μm) changes. The variation of crystal composition (Ga or Si), as well as the introduction of Al or Ti ions in LGSO do not result in the emergence of absorption in the red region. However, in this case the character of absorption in the UV-region noticeably changes. Recommendations for obtaining transparent crystals are given
Keywords
annealing; gallium compounds; impurity absorption spectra; infrared spectra; lanthanum compounds; piezoelectric materials; ultraviolet spectra; visible spectra; 0.29 to 3.75 micrometre; 623 to 1173 K; La3Ga5SiO14; UV-region; absorption band edge; annealing; colored samples; electrophysical parameters; langasite; piezoelectric materials; transparent crystals; Annealing; Automatic control; Bridges; Crystals; Iron; Lattices; Optical materials; Platinum; Temperature; Weight control;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium, 1995. 49th., Proceedings of the 1995 IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2500-1
Type
conf
DOI
10.1109/FREQ.1995.484065
Filename
484065
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