Langasite crystal quality improvement aimed at high-Q resonator fabrication

Author

Gotalskaja, A.N. ; Dresin, D.I. ; Schegolkova, S.N. ; Saveleva, N.I. ; Bezdelkin, V.V. ; Cherpoukhina, G.N.

Author_Institution

LANTAN Co. Ltd., Moscow

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

657

Lastpage

666

Abstract

Processes of langasite crystal growth are considered. Heat assembly design, pulling and rotation rates are optimized. Composition of charge, impurity content and technology of its manufacture have been studied. Influence of annealing regimes on crystal quality are discussed. Design and technology investigations of langasite resonators for crystal material quality factor evaluation is reported. Langasite resonator at 5 MHz, 3rd overtone has been developed

Keywords

Q-factor; annealing; crystal growth from melt; crystal resonators; gallium compounds; lanthanum compounds; piezoelectric materials; silicon compounds; 5 MHz; La₃Ga₅SiO₁₄; annealing regimes; crystal growth; crystal quality improvement; heat assembly design; high-Q resonator fabrication; impurity content; langasite; pulling rates; rotation rates; third overtone; Annealing; Assembly; Crystalline materials; Crystallization; Crystals; Design optimization; Electromagnetic wave absorption; Fabrication; Impurities; Lanthanum;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1995. 49th., Proceedings of the 1995 IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2500-1

Type

conf

DOI

10.1109/FREQ.1995.484069

Filename

484069