DocumentCode
3221359
Title
Stress stability of W-Ti X-ray absorber in patterning process
Author
Kitamura, K. ; Yabe, H. ; Ami, S. ; Kise, K. ; Aya, S. ; Marumoto, K. ; Sato, S.
Author_Institution
Adv. Technol. R&D Centre, Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1999
fDate
6-8 July 1999
Firstpage
104
Lastpage
105
Abstract
In this paper, the authors investigate the stress stability of W-Ti X-ray absorbers and image placement (IF) errors of full-field X-ray masks in absorber dry etching.
Keywords
X-ray absorption; X-ray masks; errors; internal stresses; sputter etching; titanium alloys; tungsten alloys; W-Ti; W-Ti X-ray absorber; W-Ti X-ray absorbers; absorber dry etching; full-field X-ray masks; image placement errors; patterning process; stress stability; Amorphous materials; Biomembranes; Dry etching; Research and development; Resists; Silicon carbide; Stability; Stress measurement; Wet etching; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797498
Filename
797498
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