Title :
Pyrolytical boron nitride as a window material for high power microwave electron devices
Author_Institution :
Fed. State Unitary Enterprise Sci. & Production Corp. Toriy, Moscow, Russia
Abstract :
The leading manufacturers of the vacuum microwave devices use alumina and beryllia ceramics as the main materials for the input-output window barriers. At present, aluminum nitride is considered as a possible alternative to these traditional materials. Meanwhile a well-known pyrolytical boron nitride (PBN) seems to be a material, which remains underestimated by the major part of ED developers. Some of its principally substantial properties are shown in the table in comparison with the properties of the materials mentioned above and CVD diamond.
Keywords :
III-V semiconductors; Q-factor; Young´s modulus; boron compounds; microwave devices; permittivity; secondary emission; thermal conductivity; vacuum microelectronics; wide band gap semiconductors; BN; CVD diamond; Young´s modulus; alumina ceramics; aluminum nitride; beryllia ceramics; dielectric constant; first crossover energy; fragility; high power microwave electron devices; input-output window barriers; linear expansion coefficient; pyrolytical boron nitride; quality factor; secondary emission yield; thermal conductivity; toxicity; vacuum microwave devices; window material; Boron; Diamond-like carbon;
Conference_Titel :
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-6645-0
DOI :
10.1109/IVESC.2010.5644458