DocumentCode
3221476
Title
Pyrolytical boron nitride as a window material for high power microwave electron devices
Author
Prokofiev, B.V.
Author_Institution
Fed. State Unitary Enterprise Sci. & Production Corp. Toriy, Moscow, Russia
fYear
2010
fDate
14-16 Oct. 2010
Firstpage
205
Lastpage
206
Abstract
The leading manufacturers of the vacuum microwave devices use alumina and beryllia ceramics as the main materials for the input-output window barriers. At present, aluminum nitride is considered as a possible alternative to these traditional materials. Meanwhile a well-known pyrolytical boron nitride (PBN) seems to be a material, which remains underestimated by the major part of ED developers. Some of its principally substantial properties are shown in the table in comparison with the properties of the materials mentioned above and CVD diamond.
Keywords
III-V semiconductors; Q-factor; Young´s modulus; boron compounds; microwave devices; permittivity; secondary emission; thermal conductivity; vacuum microelectronics; wide band gap semiconductors; BN; CVD diamond; Young´s modulus; alumina ceramics; aluminum nitride; beryllia ceramics; dielectric constant; first crossover energy; fragility; high power microwave electron devices; input-output window barriers; linear expansion coefficient; pyrolytical boron nitride; quality factor; secondary emission yield; thermal conductivity; toxicity; vacuum microwave devices; window material; Boron; Diamond-like carbon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International
Conference_Location
Nanjing
Print_ISBN
978-1-4244-6645-0
Type
conf
DOI
10.1109/IVESC.2010.5644458
Filename
5644458
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