DocumentCode
3221519
Title
Investigation of power MOSFET switching at cryogenic temperatures
Author
Giesselmann, M. ; Mahund, Z. ; Carson, S.
Author_Institution
Pulsed Power Lab., Texas Tech. Univ., Lubbock, TX, USA
fYear
1996
fDate
25-27 Jun 1996
Firstpage
47
Lastpage
50
Abstract
Operation of power MOSFETs (metal oxide semiconductor field effect transistor) at cryogenic temperatures significantly reduces conduction losses and increases power handling capability. High voltage (1000 V+) devices exhibit the largest reduction of conduction losses. The breakdown voltage of the devices is reduced by about 20% when cooled from 75°F down to -319°F
Keywords
cryogenic electronics; field effect transistor switches; losses; power MOSFET; 75 to -319 F; conduction losses reduction; cryogenic temperatures; high voltage devices; metal oxide semiconductor field effect transistor; power MOSFET switching; power handling capability; Circuit testing; Containers; Cryogenics; Diodes; Driver circuits; Insulation; MOSFET circuits; Power MOSFET; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 1996., Twenty-Second International
Conference_Location
Boca Raton, FL
Print_ISBN
0-7803-3076-5
Type
conf
DOI
10.1109/MODSYM.1996.564446
Filename
564446
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