Title :
Investigation of power MOSFET switching at cryogenic temperatures
Author :
Giesselmann, M. ; Mahund, Z. ; Carson, S.
Author_Institution :
Pulsed Power Lab., Texas Tech. Univ., Lubbock, TX, USA
Abstract :
Operation of power MOSFETs (metal oxide semiconductor field effect transistor) at cryogenic temperatures significantly reduces conduction losses and increases power handling capability. High voltage (1000 V+) devices exhibit the largest reduction of conduction losses. The breakdown voltage of the devices is reduced by about 20% when cooled from 75°F down to -319°F
Keywords :
cryogenic electronics; field effect transistor switches; losses; power MOSFET; 75 to -319 F; conduction losses reduction; cryogenic temperatures; high voltage devices; metal oxide semiconductor field effect transistor; power MOSFET switching; power handling capability; Circuit testing; Containers; Cryogenics; Diodes; Driver circuits; Insulation; MOSFET circuits; Power MOSFET; Temperature; Voltage;
Conference_Titel :
Power Modulator Symposium, 1996., Twenty-Second International
Conference_Location :
Boca Raton, FL
Print_ISBN :
0-7803-3076-5
DOI :
10.1109/MODSYM.1996.564446
