Mass production back-grinding/wafer-thinning technology for GaAs devices

Author

Nishiguchi, Masayuki ; Goto, Noboru ; Sekiguchi, Takeshi ; Nishizawa, Hideaki ; Hayashi, Hideki ; Ono, Kimizo

Author_Institution

Sumitomo Electr.. Ind. Ltd., Yokohama, Japan

fYear

1989

fDate

25-27 Sept. 1989

Firstpage

209

Lastpage

213

Abstract

A mass-production back-grinding technology that is applicable to a fully automatic wafer-thinning process in GaAs device manufacturing is described. Excellent productivity has been realized because the brittleness of GaAs has been overcome. A mirrorlike, stress-free surface was obtained by utilizing the wafer-rotating downfeed grinding method with slight chemical etching. The thickness of the deformed layer due to back-grinding was evaluated at 0.6 mu m. the wafer bow and the changes in electrical characteristics of GaAs devices caused by this layer were eliminated by chemical etching. The threshold voltages of GaAs MESFETs were confirmed to shift negatively by no more than 5 mV. This technology has been successfully demonstrated in several kinds of GaAs device fabrication processes.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; etching; gallium arsenide; semiconductor technology; surface treatment; 0.6 micron; GaAs device manufacturing; III-V semiconductors; MESFETs; electrical characteristics; fully automatic wafer-thinning process; mass-production back-grinding technology; slight chemical etching; stress-free surface; wafer bow; wafer-rotating downfeed grinding method; Chemical technology; Electric variables; Etching; Gallium arsenide; MESFETs; Manufacturing automation; Manufacturing processes; Mass production; Productivity; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1989, Proceedings. Seventh IEEE/CHMT International

Conference_Location

San Francisco, CA, USA

Type

conf

DOI

10.1109/EMTS.1989.68977

Filename

68977