DocumentCode
3221572
Title
Nano-imprint lithography for single electron tunneling devices using novel mold
Author
Hirai, Y. ; Kanemaki, Y. ; Murata, K. ; Tanaka, Y.
Author_Institution
Coll. of Eng., Osaka Prefectural Univ., Sakai, Japan
fYear
1999
fDate
6-8 July 1999
Firstpage
122
Lastpage
123
Abstract
A novel mold fabrication method for nano-imprint lithography is newly proposed. Utilizing anisotropic wet chemical etching, the mold formation having narrow gaps is principally confirmed, which would be useful for fabrication of tunneling barriers for single electron devices by imprinting lithography.
Keywords
etching; lithography; nanotechnology; quantum interference devices; anisotropic wet chemical etching; fabrication; imprinting lithography; mold fabrication method; nano-imprint lithography; narrow gaps; single electron tunneling devices; tunneling barriers; Anisotropic magnetoresistance; Electron beams; Fabrication; Lithography; Nanoscale devices; Quantum dots; Resists; Single electron devices; Tunneling; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797507
Filename
797507
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