Title :
Nano-imprint lithography for single electron tunneling devices using novel mold
Author :
Hirai, Y. ; Kanemaki, Y. ; Murata, K. ; Tanaka, Y.
Author_Institution :
Coll. of Eng., Osaka Prefectural Univ., Sakai, Japan
Abstract :
A novel mold fabrication method for nano-imprint lithography is newly proposed. Utilizing anisotropic wet chemical etching, the mold formation having narrow gaps is principally confirmed, which would be useful for fabrication of tunneling barriers for single electron devices by imprinting lithography.
Keywords :
etching; lithography; nanotechnology; quantum interference devices; anisotropic wet chemical etching; fabrication; imprinting lithography; mold fabrication method; nano-imprint lithography; narrow gaps; single electron tunneling devices; tunneling barriers; Anisotropic magnetoresistance; Electron beams; Fabrication; Lithography; Nanoscale devices; Quantum dots; Resists; Single electron devices; Tunneling; Wet etching;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797507
