Fabrication of nano holes array on Si substrate using anodically oxidized aluminum etching mask

The present study aims at the pattern transfer of nano hole array of alumina to Si semiconductor single crystalline substrates for wide applications to micro-electronics. The authors have succeeded in nano holes array fabrication on Si with diameter much smaller than that of the porous alumina nano holes etching mask. The etching process combined with sputtering and redeposition effect was very effective to reduce the transferred hole array from 60 to 13 nm. The present method is very promising for fabrication of room temperature operated quantum dot devices.