Non-Langevin recombination in disordered dielectrics

Author

Arkhipov, V.I.

Author_Institution

Moscow Eng. Phys. Inst.

fYear

1992

fDate

22-25 Jun 1992

Firstpage

559

Abstract

Summary form only given. Negative transient RIC (radiation-induced conductivity) in short-circuited samples and nonmonotonic increase of radiation-induced space-charge density have recently been observed for polymers (low-density polyethylene, polytetrafluoroethylene) and inorganic dielectrics (MgO, CaF₂, AlN, LiNiO₃). These experimental data are analyzed, and it is shown that such a behavior of RIC and space-charge density can be caused by non-Langevin recombination with the recombination constant R smaller than the Langevin value R_o. Possible mechanisms of recombination rate reduction have been considered

Keywords

electron-hole recombination; radiation effects; space charge; AlN; CaF₂; LiNiO₃; MgO; disordered dielectrics; electron-hole recombination; inorganic dielectrics; low-density polyethylene; negative transient radiation-induced conductivity; nonLangevin recombination; polymers; polytetrafluoroethylene; recombination rate reduction; short-circuited samples; space-charge density; Charge carrier density; Charge carrier processes; Conducting materials; Conductivity; Dielectric materials; Dispersion; Distributed power generation; Electrodes; Photoconducting materials; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Conduction and Breakdown in Solid Dielectrics, 1992., Proceedings of the 4th International Conference on

Conference_Location

Sestri Levante

Print_ISBN

0-7803-0129-3

Type

conf

DOI

10.1109/ICSD.1992.225030

Filename

225030