Observation of spin-dependent tunneling current using optically pumped GaAs microtip

Author

Shinohara, R. ; Yamaguchi, K.

Author_Institution

Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu, Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

128

Lastpage

129

Abstract

The spin-polarized scanning tunneling microscope (SP-STM) using a photoexcited GaAs tip has been expected to observe magnetic domains and surface spin structures with atomic spatial resolution. Spin-polarized electrons can be generated in the GaAs conduction band by circularly polarized light pumping. We developed GaAs microtips and are trying to realize the SP-STM system. In this paper, we report the influence of surface states of the GaAs microtip on the spin-dependent tunneling current. This effect is very important to obtain high sensitivity in the SP-STM using a GaAs tip.

Keywords

III-V semiconductors; electron spin polarisation; gallium arsenide; scanning tunnelling microscopy; surface states; GaAs; circularly polarized light pumping; optically pumped GaAs microtip; photoexcited GaAs tip; spin-dependent tunneling current; spin-polarized scanning tunneling microscope; surface states; Atom optics; Electron optics; Gallium arsenide; Magnetic domains; Magnetic force microscopy; Magnetic tunneling; Optical polarization; Optical pumping; Optical sensors; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797510

Filename

797510