Electron beam doping (superdiffusion) in damage-free regions of semiconductors by the kick-out mechanism (SIMS and PL measurements)

Author

Wada, T. ; Kato, T. ; Fujomoto, H. ; Yasui, F. ; Ohtsu, K. ; Saka, T.

Author_Institution

Dept. of Appl. Electron., Daido Inst. of Technol., Nagoya, Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

144

Lastpage

145

Abstract

It is shown that electron-beam doping processes (superdiffusion) in semiconductors are useful for microprocesses, even in the damage-free region and at room temperature, and these experimental results are in good agreement with the exact solutions of the so-called kick-out mechanism. Silicon and zinc atoms diffuse into GaAs wafers, respectively due to the kick-out mechanism by electron beam doping.

Keywords

III-V semiconductors; diffusion; electron beam effects; gallium arsenide; photoluminescence; secondary ion mass spectra; semiconductor doping; silicon; zinc; 293 K; GaAs:Si; GaAs:Zn; SIMS; damage-free regions; electron beam doping; kick-out mechanism; photoluminescence; semiconductors; superdiffusion; Atomic layer deposition; Atomic measurements; Electron beams; Gallium arsenide; Impurities; Paper technology; Semiconductor device doping; Silicon; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797518

Filename

797518