Radiation damage in focused ion beam implantation

Compared to conventional ion implantation, focused ion beam (FIB) implantation works with a current density which is up to five orders of magnitude higher. This has an effect on the accumulated radiation damage during the implantation process. The present work shows how the radiation damage is influenced by the dwell-time in the case of focused ion beam synthesis (IBS) of cobalt disilicide. If the accumulated damage during implantation is not too high the use of conventional ion implantation IBS results in single-crystalline CoSi/sub 2/ layers.