Effects of transient ultrasonic switch for amorphous semiconductor superlattices

Author

Zhang, Xiao-rong ; Gan, Chang-ming ; Mao, G.M. ; Chen, K.J.

Author_Institution

Inst. of Acoust., Nanjing Univ., China

Volume

1

fYear

1997

fDate

5-8 Oct 1997

Firstpage

601

Abstract

We found the effects of transient ultrasonic switch due to optical absorption in periodic compositional amorphous semiconductor superlattice a-Si:H/a-SiN_x:H films (samples). The effects were observed from the amplitude drop of surface acoustic wave (SAW) while the optic light illuminated the surface of the samples. For the samples, the thickness of the a-Si:H sublayer is varied from 10 Å to 200 Å, and that of the a-SiN_x:H sublayer is fixed at 30 Å. Respectively. Two interdigital transducers with center frequency of 136 MHz are used as exciting and receiving transducers for SAW. The results show that, the influence of optical radiation on decreasing SAW amplitude is transient, but on the velocity change of SAW often has some delay. The effects of transient ultrasonic switch depend on the thickness of a-Si:H sublayer and the power of optic light. The optimum thickness is equal to 60 Å

Keywords

silicon; 10 to 200 angstrom; Si:H-SiN:H; amorphous semiconductor superlattices; interdigital transducers; optical absorption; surface acoustic wave; transient ultrasonic switch; velocity change; Absorption; Amorphous semiconductors; Optical films; Optical superlattices; Optical surface waves; Optical switches; Semiconductor films; Semiconductor superlattices; Surface acoustic waves; Ultrasonic transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1997. Proceedings., 1997 IEEE

Conference_Location

Toronto, Ont.

ISSN

1051-0117

Print_ISBN

0-7803-4153-8

Type

conf

DOI

10.1109/ULTSYM.1997.663093

Filename

663093