• DocumentCode
    3221955
  • Title

    A sub-threshold halo implanted MOS implementation of an electronic neuron

  • Author

    Dutra, Odilon O. ; Colleta, Gustavo D. ; Ferreira, Luis H. C. ; Pimenta, Tales C.

  • Author_Institution
    Syst. Eng. & Inf. Technol. Inst., Fed. Univ. of Itajuba, Itajuba, Brazil
  • fYear
    2013
  • fDate
    15-18 Dec. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This work describes a current mode implementation of Izhikevich neuron model designed with 130 nm halo implanted devices structured within matrices of order m × n capable of substantially increasing output impedance while also improving mismatch and requiring a power supply of only 250 mV.
  • Keywords
    MOS integrated circuits; neural nets; Izhikevich neuron model; current mode implementation; electronic neuron; output impedance; power supply; size 130 nm; sub-threshold halo implanted MOS implementation; voltage 250 mV; Capacitance; DTL; Izhikevich implementation; Neuron; halo implanted devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2013 25th International Conference on
  • Conference_Location
    Beirut
  • Print_ISBN
    978-1-4799-3569-7
  • Type

    conf

  • DOI
    10.1109/ICM.2013.6734979
  • Filename
    6734979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3221955