DocumentCode
3222070
Title
High-speed maskless laser patterning of thin films for giant microelectronics
Author
Yavas, O. ; Takai, M.
Author_Institution
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
fYear
1999
fDate
6-8 July 1999
Firstpage
172
Lastpage
173
Abstract
Residue-free, electrically isolating lines could be patterned by UV laser irradiation of ITO films on lime glass substrates. Absorption of the laser light by the glass substrate was found to be crucial for residue-free film removal. High process speeds in excess of 1 m/s could be achieved.
Keywords
indium compounds; isolation technology; laser materials processing; photolithography; semiconductor materials; semiconductor thin films; tin compounds; 1 m/s; ITO; ITO films; InSnO; UV laser irradiation; giant microelectronics; high process speeds; high-speed maskless laser patterning; light absorption; lime glass substrates; residue-free electrically isolating lines; residue-free film removal; thin films; Flat panel displays; Glass; Indium tin oxide; Microelectronics; Morphology; Optical films; Optical materials; Substrates; Transistors; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location
Yokohama, Japan
Print_ISBN
4-930813-97-2
Type
conf
DOI
10.1109/IMNC.1999.797532
Filename
797532
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