Title :
A digital filter model for time-domain analysis of the two-band model [resonant interband tunneling diodes]
Author :
Tsukui, Y. ; Suzuki, M. ; Sanada, H. ; Nagai, N.
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
Abstract :
Resonant interband tunneling (RIT) diodes show a very high peak to valley ratio, and have been expected to be high speed devices. This paper presents an equivalent circuit for the two-band model, which describes the behavior of electron waves in RIT structures and derives digital filters which simulate the time evolution of electron waves in RIT structures. The digital filters derived have advantages in terms of numerical stability and parallel realization. In addition, a multi-grid algorithm and an absorbing boundary are presented in order to achieve efficiency for the digital filter. Finally, an example of simulation is shown
Keywords :
digital filters; digital simulation; equivalent circuits; numerical stability; resonant tunnelling diodes; semiconductor device models; time-domain analysis; RIT diodes; RIT structures; absorbing boundary; digital filter model; digital filters; electron wave time evolution simulation; electron waves; equivalent circuit; high speed devices; multi-grid algorithm; numerical stability; parallel realization; peak to valley ratio; resonant interband tunneling diodes; simulation; time-domain analysis; two-band model; Circuit simulation; Digital filters; Electrons; Equivalent circuits; Numerical stability; Parallel processing; Resonance; Time domain analysis; Tunneling; Wave functions;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932440