BSIM3v3 key parameter extractions for efficient circuit designs

Author

Ngarmnil, Jitkasame ; Sangnak, Wichai

Author_Institution

Electron. Eng. Dept., Mahanakorn Univ. of Technol., Bangkok, Thailand

fYear

2000

fDate

2000

Firstpage

99

Lastpage

103

Abstract

At present, most CMOS technologies are based on the use of BSIM3v3 MOSFET model, which has been intensively developed to meet the requirements for optimum accuracy. This results in a very accurate and complex MOSFET model, which affects designers, especially when performing hand calculations during the analysis and synthesis process. This paper presents an essential concept of BSIM3v3 key parameter extraction for efficient CMOS circuit design. Key parameter extractions from various CMOS SPICE parameter files are presented. Design examples on HSPICE are given to demonstrate the performance of the methodology

Keywords

CMOS integrated circuits; MOSFET; SPICE; integrated circuit design; semiconductor device models; BSIM3v3 MOSFET model; BSIM3v3 key parameter extractions; CMOS SPICE parameter files; CMOS technologies; HSPICE; complex MOSFET model; efficient CMOS circuit design; efficient circuit designs; optimum accuracy; parameter extraction; synthesis process; CMOS technology; Circuit simulation; Circuit synthesis; Circuit testing; MOS devices; MOSFET circuits; Parameter extraction; Performance analysis; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on

Conference_Location

Guoman Port Dickson Resort

Print_ISBN

0-7803-6430-9

Type

conf

DOI

10.1109/SMELEC.2000.932442

Filename

932442