Control of initial layer for low temperature and high deposition rate polycrystalline silicon film formation process

Author

Murata, K. ; Ito, Minora ; Hori, M. ; Goto, T.

Author_Institution

Dept. of Quantum Eng., Nagoya Univ., Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

212

Lastpage

213

Abstract

In this study, the two step growth (TSG) method has been demonstrated to satisfy thin interface layer, the high crystallinity and high deposition rate of poly-Si film, at the same time. In the TSG, firstly the seed layer was formed without charged species, that is, with neutral species. Then, the poly-Si film was subsequently grown on the seed layer with charged species. The effects of ion bombardment on the nucleation of poly-Si films at the initial growth stage are intensively discussed.

Keywords

elemental semiconductors; nucleation; plasma CVD; semiconductor growth; semiconductor thin films; silicon; Si; charged species; crystallinity; interface layer; ion bombardment; low temperature deposition; nucleation; plasma-enhanced CVD; polycrystalline silicon film; seed layer; two step growth; Atomic force microscopy; Crystallization; Plasma temperature; Rough surfaces; Semiconductor films; Silicon; Substrates; Surface morphology; Surface roughness; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797552

Filename

797552