Design concepts of single-layer-resists for VUV lithography

Author

Kishimura, Shinji ; Katsuyama, Akiko ; Sasago, Masaru ; Shirai, Masamitsu ; Tsunooka, Masahiro

Author_Institution

ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

226

Lastpage

227

Abstract

We have studied the design of single-layer-resists for VUV lithography. From the point of view of transparency, phenol resins may be used as well as methacrylate polymers in VUV lithography. The resulting high contrast is thought due to the effect of direct photodecomposition of base polymer and photo-deprotection in addition to the deprotection by acids. We are planning to investigate the polymers with higher transparency (ex. halogen-substituted phenol resins) and the polymer structure inhibiting the crosslinking.

Keywords

photoresists; ultraviolet lithography; VUV lithography; deprotection; methacrylate polymer; phenol resin; photodecomposition; polymer film; single-layer-resist; transparency; Absorption; Chemical technology; Electronic mail; Lamps; Lithography; Polymers; Resins; Resists; Ultra large scale integration; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797559

Filename

797559

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3222639