Title :
A uniformity study of PECVD SiO2 using IPL 2000 E/D
Author :
Bais, B. ; Ghafar, B.A. ; Majlis, B.Y.
Author_Institution :
Fac. of Eng., Kebangsaan Univ., Bangi, Malaysia
Abstract :
The uniformity of silicon dioxide as a passivation layer deposited by PECVD using IPL 2000 E/D was studied. A four inch wafer was used for the deposition using the PECVD technique with two reactant gases, silane (SiH4) and nitrous oxide (N2O), with substrate temperature of 300 °C. Four samples were deposited at different times: 5, 10, 15 and 20 minutes. The deposited oxide thickness and its respective refractive index were measured using an ellipsometer and plotted against the deposition time. The deposition parameters were also observed and reported
Keywords :
dielectric thin films; ellipsometry; integrated circuit technology; passivation; plasma CVD; refractive index; silicon compounds; surface topography; 10 min; 15 min; 20 min; 300 C; 5 min; IPL 2000 E/D; N2O; PECVD; PECVD SiO2; SiH4; SiO2; deposited oxide thickness; deposition parameters; deposition time; ellipsometer; nitrous oxide; reactant gases; respective refractive index; silane; silicon dioxide passivation layer; substrate temperature; uniformity; Fasteners; Gases; Hafnium; Nitrogen; Optical films; Passivation; Refractive index; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932466
