• DocumentCode
    3223642
  • Title

    DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

  • Author

    Jones, G.W. ; Taylor, D.M. ; Gomes, H.L.

  • Author_Institution
    Sch. of Electron. Eng. & Comput. Syst., Wales Univ., Bangor, UK
  • fYear
    1996
  • fDate
    35368
  • Firstpage
    42583
  • Lastpage
    42584
  • Abstract
    Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the “rate window” technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory
  • Keywords
    Schottky diodes; DLTS; Deep Level Transient Spectroscopy; P3MeT Schottky barrier diodes; Schottky barrier diodes; capacitance transients; depletion region; electropolymerised poly(3-methylthiophene); hole traps; isochronal differential capacitance curves; rate window;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Conducting Polymers and Their Applications in Transducers and Instrumentation (Digest No: 1996/242), IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19961295
  • Filename
    644205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3223642