Title :
A two-dimensional analytical subthreshold behavior model for short-channel dual-material gate (DMG) AlGaAs/GaAs HFETs
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
Based on the exact solution of the two-dimensional Poisson´s equation, a new analytical model for the subthreshold behavior of a short-channel dual-material gate(DMG) AlGaAs/GaAs HFET´s is developed. The model illustrates how the device parameters affect the subthreshold characteristics. Both thin doped AlGaAs body and thin intrinsic AlGaAs spacer can greatly suppress the SCEs and reduce the degradation of threshold voltage and subthreshold swing. Besides, by either tuning a larger ratio of control gate to screen gate length or adjusting work function of the screen gate to a higher value, the DMG structure can lessen the drain-induced barrier lowering(DIBL) and degrade the subthreshold behavior. The model is verified by its good agreement with the numerical simulation of the device simulator.
Keywords :
Poisson equation; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaAs-GaAs; drain-induced barrier lowering; short-channel dual-material gate HFET; two-dimensional Poisson equation; Analytical models; Degradation; Gallium arsenide; HEMTs; Leakage current; MODFETs; Numerical simulation; Poisson equations; Threshold voltage; Turning;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394168
