Title :
A semi numerical approach for semiconductor devices physical modeling
Author :
Dehmas, M. ; Azrar, A. ; Recioui, A. ; Challal, M.
Author_Institution :
Dgee / Fsi, Univ. of Boumerdes, Boumerdes, Algeria
Abstract :
In this work, the developed mathematical extension of the semi analytical method of lines (MoL) for the solution of Poisson´s equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion mode.
Keywords :
MOS capacitors; Poisson equation; method of lines; semiconductor device models; voltage distribution; MOS capacitor; Poisson equation; deep depletion mode; electrodes configuration; geometry; mathematical extension; semianalytical method of lines; semiconductor devices physical modeling; seminumerical approach; voltage distribution; Differential equations; Electrodes; Geometry; MOS capacitors; Mathematical model; Poisson equations; Semiconductor devices; Semiconductor impurities; Solid modeling; Voltage;
Conference_Titel :
Advances in Computational Tools for Engineering Applications, 2009. ACTEA '09. International Conference on
Conference_Location :
Zouk Mosbeh
Print_ISBN :
978-1-4244-3833-4
Electronic_ISBN :
978-1-4244-3834-1
DOI :
10.1109/ACTEA.2009.5227928
