Title :
The influence of I-region width modulation on PIN diode attenuator design
Author :
Caverly, Robert H. ; Zhi Wen Tang
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Dartmouth, MA, USA
Abstract :
This paper discusses the effects of I-region width modulation on PIN diode attenuator performance. The work shows that the I-region thickness becomes thinner as the dc bias current decreases, and that overestimates of PIN diode forward resistance can be the result.<>
Keywords :
microwave circuits; p-i-n diodes; waveguide attenuators; I-region thickness; I-region width modulation; PIN diode attenuator; attenuator design; dc bias current; forward resistance; microwave attenuators; reflective attenuators; Attenuation; Attenuators; Charge measurement; Diodes; Electrical resistance measurement; Microwave circuits; Radio frequency; Switches; Switching circuits; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406091
