A study on InGaN/GaN multiple quantum-well hydrogen sensor with HfTiO as gate dielectric

Author

Chen, Gang ; Choi, A.H.W. ; Lai, P.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

127

Lastpage

130

Abstract

A hydrogen sensor based on InGaN/GaN multiple quantum wells (MQWs) was fabricated. A gate dielectric HfTiO was added to stabilize its performance at high temperature. Its hydrogen-sensing properties were studied at high temperatures from 100Â°C to 500Â°C. The sensor showed promising hydrogen-sensing properties over a wide temperature range, and could still function beyond 500Â°C.

Keywords

III-V semiconductors; gallium compounds; gas sensors; hafnium compounds; high-k dielectric thin films; hydrogen; indium compounds; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; H₂; InGaN-GaN-HfTiO; MQWs; carrier-localization effect; gate dielectric; hydrogen sensor; hydrogen-sensing properties; multiple quantum wells; temperature 100 degC to 500 degC; Atomic layer deposition; Gallium nitride; High K dielectric materials; High-K gate dielectrics; Hydrogen; Indium; Jitter; Quantum well devices; Sputtering; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394172

Filename

5394172