Surface recombination/generation velocity in metal-oxide-silicon field-effect transistors

Photo-device efficiency and performance are limited by the surface carrier recombination because the minority carriers are lost in the recombination process which also generates heat and increases device temperature. Based on Shockley-Read-Hall steady-state theory of recombination-generation-trapping kinetics, in the paper, the recombination DC current voltage (R-DCIV) method is extended to explore the surface minority carrier recombination/generation velocity along the surface channel region in metal-oxide-silicon (MOS) transistors. It shows that the surface recombination/generation velocity is not a system constant but can be modulated by the gate voltage in the photo-devices with an MOS structure.