A novel E-SIMOX high voltage device structure with the charge islands on the SOI

Author

Wu, Lijuan ; Hu, Shengdong ; Zhang, Bo ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

99

Lastpage

102

Abstract

Based on ENDIF (ENhanced DIelectric layer Field), a new E-SIMOX high voltage device structure with the charge islands on the SOI and its breakdown mechanism proposed in this paper. The structure is characterized by the charge islands inserted on the top interface of silicon layer and dielectric layer. Inversion holes located by Coulomb´s force enhance the electric field of the dielectric layer (E_I) and so increase the vertical breakdown voltage (BV). E_I = 917V/Â¿m and V_B,V = 345V is obtained by 2D simulation on a 0.375-Â¿m-thick dielectric layer and 2-Â¿m-thick top silicon layer. Voltage shared by dielectric layer is more than 95% of BV.

Keywords

SIMOX; inversion layers; island structure; Coulomb force; E-SIMOX high voltage device structure; SOI; charge islands; dielectric layer; enhanced dielectric layer field; inversion holes; silicon layer; size 0.375 mum; size 2 mum; voltage 345 V; Breakdown voltage; CMOS technology; Dielectric breakdown; Dielectric devices; Dielectric substrates; Doping; Permittivity; Silicon on insulator technology; Tellurium; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394181

Filename

5394181