Title :
Dielectric loaded Gaussian beam oscillator in the 40 GHz band
Author :
Kiyokawa, M. ; Matsui, Takashi ; Hirose, Naoki
Author_Institution :
Commun. Res. Lab., Minist. of Posts & Telecommun., Tokyo, Japan
Abstract :
A 40-GHz Gaussian output-beam oscillator, using a Gaussian-beam open resonator filled with a dielectric, is described. The dielectric resonator has a highly reflective convex spherical surface and a plane mirror surface having a coupling section with an active circuit. The circuit is fabricated using a commercial HEMT chip. The phase noise of -90 dBc/Hz at 100 kHz off carrier is expected. The output power is extracted as a Gaussian beam.<>
Keywords :
HEMT integrated circuits; dielectric resonator oscillators; dielectric-loaded waveguides; field effect MMIC; integrated circuit noise; millimetre wave oscillators; phase noise; 40 GHz; Gaussian-beam open resonator; HEMT chip; active circuit; convex spherical surface; coupling section; dielectric loaded Gaussian beam oscillator; output power; phase noise; plane mirror surface; Active circuits; Coupling circuits; Dielectric substrates; Millimeter wave circuits; Millimeter wave communication; Millimeter wave technology; Mirrors; Oscillators; Phase noise; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406094
