Numerical simulation study on electron mobility of independent DG MOSFETs

Author

Chen, Lin ; Xu, Yiwen ; Zhang, Lining ; Zhou, Wang ; He, Frank

Author_Institution

Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

54

Lastpage

57

Abstract

Numerical simulation study on electron mobility in independent DG MOSFETs with back gate biased in accumulation, flatband and inversion operation regions is presented in this paper. A numerical simulation program of the electron transport in the independent DG MOSFETs, which includes both phonon and surface roughness scattering mechanisms, is developed. From it, the dependence characteristics of the DG MOSFET electron mobility on the device operation conditions and the structure parameters are discussed. It is shown that DG MOSFET exhibits higher mobility when back gate is biased in inversion region compared to simulation results when back gate is in flat-band or accumulation regions. Mobility enhancement is observed in devices with thinner silicon film, when higher field is applied, which can be attributed to Â¿volume inversionÂ¿ in DG MOSFET.

Keywords

MOSFET; electron mobility; phonons; semiconductor device models; surface roughness; electron mobility; independent DG MOSFET; phonon scattering; structure parameter; surface roughness scattering; Electron mobility; Helium; MOSFETs; Numerical simulation; Optical scattering; Optical surface waves; Phonons; Rough surfaces; Silicon; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394190

Filename

5394190