Title :
Generic DG MOSFET analytic model with vertical electric field induced mobility degradation effects
Author :
Zhou, Xingye ; Zhang, Lining ; Zhang, Jian ; He, Frank ; Zhang, Xing
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
A generic DG MOSFET analytic model with vertical electric field induced mobility degradation effects is proposed and verified in this paper. It is shown that the proposed model is valid for different operation modes including symmetric DG (sDG), asymmetric DG (aDG) and independent DG (iDG). Extensive two-dimensional (2-D) device simulation is performed to verify the proposed model.
Keywords :
MOSFET; asymmetric DG; generic DG MOSFET analytic model; independent DG; symmetric DG; two-dimensional device simulation; vertical electric field induced mobility degradation effects; CMOS technology; Circuit simulation; Degradation; Helium; Integrated circuit technology; Laboratories; MOSFET circuits; Semiconductor films; Silicon; Two dimensional displays;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394191
