DocumentCode
3224134
Title
Generic DG MOSFET analytic model with vertical electric field induced mobility degradation effects
Author
Zhou, Xingye ; Zhang, Lining ; Zhang, Jian ; He, Frank ; Zhang, Xing
Author_Institution
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
fYear
2009
fDate
25-27 Dec. 2009
Firstpage
58
Lastpage
62
Abstract
A generic DG MOSFET analytic model with vertical electric field induced mobility degradation effects is proposed and verified in this paper. It is shown that the proposed model is valid for different operation modes including symmetric DG (sDG), asymmetric DG (aDG) and independent DG (iDG). Extensive two-dimensional (2-D) device simulation is performed to verify the proposed model.
Keywords
MOSFET; asymmetric DG; generic DG MOSFET analytic model; independent DG; symmetric DG; two-dimensional device simulation; vertical electric field induced mobility degradation effects; CMOS technology; Circuit simulation; Degradation; Helium; Integrated circuit technology; Laboratories; MOSFET circuits; Semiconductor films; Silicon; Two dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location
Xi´an
Print_ISBN
978-1-4244-4297-3
Electronic_ISBN
978-1-4244-4298-0
Type
conf
DOI
10.1109/EDSSC.2009.5394191
Filename
5394191
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