ULTRA-SOI: New generation of SOI CMOS model with physics based dynamic depletion characteristics

ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson´s equation to solve the potential along the vertical direction of the silicon film. The model is intended to retain as much detail physics as possible while providing sufficient flexibility to add advanced physical effects that arise from the development of new features in processing technology. Most small dimension effects have been incorporated in the model and being verified by extensive numerical simulation and experimental data. At present, the formulation of the I-V, C-V, and non-quasi-static (NQS) model has been completed.