DocumentCode :
322421
Title :
Influence of growth conditions on structure, composition homogeneity and mechanical properties of thermoelectric crystals for coolers
Author :
Bublik, V.T. ; Karataev, V.V. ; Osvenski, V.B. ; Sagalova, T.B. ; Ufimtsev, V.B. ; Frolov, A.M.
Author_Institution :
Inst. of Chem. Probs. for Microelectron., Moscow Inst. of Steel & Alloys, Russia
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
118
Lastpage :
121
Abstract :
The object of this work is to produce by economical method (vertical zone melting) the polycrystalline textured ingots of p- and n-type thermoelectric materials (TEM) based on antimony and bismuth tellurides and selenides solid solutions with high performance parameters (thermoelectric figure-of-merit Z) and diameter not less than 20 mm. Following problems were to be solved: a) the formation of favorable crystallographic orientation with minimum scatter which allows to make use of properties anisotropy to achieve maximum value of Z; b) preparation of solid solutions with reasonably homogeneous composition (along and across the ingot) and reproducible alloying level; c) elucidation of causes of mechanical stresses, that are responsible for cracking, to produce material with adequate mechanical properties. The texture, phase composition, macro- and microscale composition inhomogeneity of solid solution have been studied with X-ray diffraction methods by evaluation of lattice parameter and smearing (broadening) of diffraction maxima. In addition, microheterogeneity was assessed by microhardness measurements coupled with local elemental microanalysis (local X-ray microprobe). The cracking pattern was correlated with microstructure features (using optical metallography and X-ray topography). The slip lines formed by indenter prints during microhardness measurements were used for evaluation of cross-sectional disorder of adjacent grains, whose cleavage planes are parallel to ingot axis
Keywords :
X-ray diffraction; antimony compounds; bismuth compounds; crystal growth from melt; crystal structure; microhardness; semiconductor materials; thermoelectric power; 20 mm; Bi2Se3; Bi2Te3; Sb2Se; Sb2Te3; X-ray diffraction methods; composition homogeneity; crystallographic orientation; growth conditions; lattice parameter; mechanical properties; mechanical stresses; microhardness measurements; smearing; structure; thermoelectric crystals; thermoelectric figure-of-merit; Bismuth; Crystalline materials; Crystallography; Mechanical factors; Optical diffraction; Optical scattering; Solids; Thermoelectricity; X-ray diffraction; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.666989
Filename :
666989
Link To Document :
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