DocumentCode :
3224248
Title :
An oxide/silicon core/shell nanowire FET
Author :
Zhang, Lining ; He, Jin ; Ma, Chenyue ; Zhou, Xingye ; Bian, Wei ; Li, Lin ; Chan, Mansun
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear :
2011
fDate :
15-18 Aug. 2011
Firstpage :
130
Lastpage :
133
Abstract :
An oxide/silicon core/shell nanowire (OSCSNW) MOSFET is proposed. Its fabrication process and performance are described in detail. The ION/IOFF ratio of the OSCSNW is improved by more than one order of magnitude compared with traditional nanowire (TNW) devices. Excellent scaling characteristics are also observed from the OSCSNW MOSFETs with minimal threshold voltage roll-off, drain induced barrier lowing and subthreshold slope degradation. Furthermore, the high frequency characteristics of OSCSNWs are also investigated.
Keywords :
MOSFET; nanowires; OSCSNW MOSFET; drain induced barrier lowing; minimal threshold voltage roll-off; oxide/silicon core/shell nanowire FET; scaling characteristics; subthreshold slope degradation; Charge carrier density; Leakage current; Logic gates; MOSFET circuits; Nanoscale devices; Scalability; Silicon; MOSFET; Nanowire; core/shell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
ISSN :
1944-9399
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2011.6144306
Filename :
6144306
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3224248
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