Title :
Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell
Author :
Wei, Yiqun ; Wang, Laidong ; Wang, Wei ; Lin, Xinnan ; He, Frank ; Chan, Mansun ; Zhang, Xing
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Beijing, China
Abstract :
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) has been paid more attention. However, there are still many open issues such as numerical simulation to study. Phase transition is a temperature based process, which can be simulated by temperature profile generated by the device simulator coupled with the phase transition model. In this work, a phase transition model is implemented, which can provide the amorphization process simulation and the nucleation process simulation, and the set and reset process are simulated. Meanwhile the readout I-V characteristics are simulated and discussed.
Keywords :
amorphisation; nucleation; phase change memories; amorphization process simulation; nanoscale phase-change memory cell; nonvolatile memory; nucleation process simulation; phase transition model; temperature profile; Amorphous materials; Analytical models; Crystallization; Design optimization; Logic; Nonvolatile memory; Numerical simulation; Phase change materials; Phase change memory; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394197
