• DocumentCode
    322428
  • Title

    Structural and electrical properties of flash evaporated (Bi0.4Sb0.6)2Te3 alloy thin films

  • Author

    Das, V. Damodara ; Ganesan, P. Gopal

  • Author_Institution
    Dept. of Phys., Indian Inst. of Technol., Madras, India
  • fYear
    1997
  • fDate
    26-29 Aug 1997
  • Firstpage
    147
  • Lastpage
    150
  • Abstract
    The alloys of (Bi1-xSbx)2Te3 are the best materials currently available for thermoelectric application near room temperature. Thin films of (Bi0.4Sb0.6)2Te3 alloy were prepared by flash evaporation technique onto clean glass substrates held at room temperature in a vacuum of 1×10-5 torr. Thickness of the films was monitored by a quartz crystal thickness monitor. Structural characterisation was carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It was found that the structure of the alloy films is hexagonal and the films are polycrystalline. Electrical resistivity and thermoelectric measurements were carried out on these films in the temperature range 300 K to 450 K. From the electrical resistivity measurements, the plot of Ln(σ) vs. 1000/T was drawn. From the plot of thermoelectric power against temperature, the nature of films has been identified. These parameters are found to influence the figure of merit of the alloy films
  • Keywords
    antimony compounds; bismuth compounds; crystal structure; electrical resistivity; semiconductor growth; semiconductor materials; semiconductor thin films; thermoelectricity; transmission electron microscopy; vacuum deposition; (Bi0.4Sb0.6)2Te3; 1E-5 torr; 20 C; 300 to 450 K; Bi0.4Sb0.6)2Te3; TEM; X-ray diffraction; XRD; clean glass substrates; electrical properties; electrical resistivity; figure of merit; flash evaporated (Bi0.4Sb0.6)2Te 3 alloy thin films; flash evaporation technique; hexagonal structure; polycrystalline film; room temperature; structural characterisation; structural properties; thermoelectric application; thermoelectric measurements; thickness; transmission electron microscopy; vacuum; Bismuth; Electric resistance; Electric variables measurement; Glass; Monitoring; Tellurium; Temperature; Thermoelectricity; Tin alloys; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
  • Conference_Location
    Dresden
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-4057-4
  • Type

    conf

  • DOI
    10.1109/ICT.1997.667047
  • Filename
    667047