Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants

Proper analytical physically based model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50 nm MOSFET is of utmost significance. To date, the existing analytical models fail to account for the higher fluctuation in threshold voltage near the source of a sub-50 nm MOSFET in presence of a random interface trap. The authors in this paper report for the first time a new analytical model incorporating interface mobility fluctuations of carrier electrons in addition to dopant number fluctuations, which precisely accounts for the higher peak of threshold voltage fluctuations at the source injection barrier of a MOSFET which is also confirmed by Ensemble Monte Carlo ( EMC ) device simulation.