Enhanced performance for OTFT on glass with HfO2 as gate dielectric by UV-ozone treatment

Author

Tang, W.M. ; Helander, M.G. ; Greiner, M.T. ; Dong, G. ; Ng, W.T. ; Lu, Z.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

513

Lastpage

516

Abstract

OTFTs on glass with high-k material HfO₂ as gate dielectric have been successfully fabricated. The devices show small sub-threshold slope, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with UV-ozone treatment has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without UV-ozone treated sample. This demonstrates that the UV-ozone treatment is a promising low-temperature annealing technique for improving the OTFT performance.

Keywords

hafnium compounds; high-k dielectric thin films; organic field effect transistors; organic semiconductors; oxygen; ultraviolet radiation effects; HfO₂; OTFT; UV-ozone treatment; drain current; glass; high-k gate dielectric; high-speed low-power operations; low-temperature annealing technique; on/off ratio; organic thin film transistors; sub-threshold slope; Annealing; Glass; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Insulation; Organic semiconductors; Organic thin film transistors; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394200

Filename

5394200