Title :
Enhanced performance for OTFT on glass with HfO2 as gate dielectric by UV-ozone treatment
Author :
Tang, W.M. ; Helander, M.G. ; Greiner, M.T. ; Dong, G. ; Ng, W.T. ; Lu, Z.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
Abstract :
OTFTs on glass with high-k material HfO2 as gate dielectric have been successfully fabricated. The devices show small sub-threshold slope, and thus are suitable for high-speed and low-power operations. This work also finds that OTFT with UV-ozone treatment has larger drain current, higher mobility, smaller sub-threshold slope and larger on/off ratio than the without UV-ozone treated sample. This demonstrates that the UV-ozone treatment is a promising low-temperature annealing technique for improving the OTFT performance.
Keywords :
hafnium compounds; high-k dielectric thin films; organic field effect transistors; organic semiconductors; oxygen; ultraviolet radiation effects; HfO2; OTFT; UV-ozone treatment; drain current; glass; high-k gate dielectric; high-speed low-power operations; low-temperature annealing technique; on/off ratio; organic thin film transistors; sub-threshold slope; Annealing; Glass; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Insulation; Organic semiconductors; Organic thin film transistors; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394200
