Photo-generated parasitical capacitance model of GaN-based pin ultraviolet detector

Author

Gao, Bo ; Liu, Hongxia ; Kuang, Qianwei ; Zhou, Wen ; Cao, Lei

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

505

Lastpage

508

Abstract

This paper investigates the variation of depletion region width in the p and n layers and the total depletion region width of GaN-based pin ultraviolet (UV) detector with applied voltage. The variation of barrier capacitance with applied voltage is presented. The carrier number in the depletion region of detector generated by the light irradiation has relationships with width of the depletion region. Based on the definition of differential capacitance, the model including the photo-generated parasitical capacitance is presented. Finally, this paper systematically analyzes the influence of doping concentration on the photo-generated parasitical capacitance, response time and the cutoff frequency of GaN-based pin ultraviolet detector. By compared with the experiment results, the validity of the model is verified.

Keywords

III-V semiconductors; gallium compounds; radiation effects; ultraviolet detectors; wide band gap semiconductors; GaN; barrier capacitance; cutoff frequency; light irradiation; photogenerated parasitical capacitance; pin ultraviolet detector; total depletion region width; Cutoff frequency; Dark current; Delay; Detectors; Doping; Gallium nitride; Parasitic capacitance; Poisson equations; Semiconductor process modeling; Voltage; GaN-based; photo-generated parasitical capacitance; pin; ultraviolet detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394202

Filename

5394202