Title :
Electronic structures and optical properties of nitrogen-doped SiC nanotube
Author :
Song, Jiuxu ; Yang, Yintang ; Liu, Hongxia
Author_Institution :
Sch. of Electron. Eng., Xi´´an Shiyou Univ., Xi´´an, China
Abstract :
The electronic structures and optical properties of the nitrogen doped silicon carbide nanotube (SiCNT) are studied with first principle calculation. A depression is formed near the doped nitrogen atom and the band gap of the SiCNT is narrowed by the doping. The optical properties of the SiCNT are also changed obviously.
Keywords :
carbon nanotubes; nitrogen; silicon compounds; wide band gap semiconductors; SiC:N; electronic structures; first principle calculation; nitrogen atom; optical properties; Atom optics; Atomic layer deposition; Crystallization; Doping; Electrons; Microelectronics; Nitrogen; Optical sensors; Photonic band gap; Silicon carbide; SiC nanotube; electronic structures; first principle calculation; optical properties;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394203
