DocumentCode
3224351
Title
Electronic structures and optical properties of nitrogen-doped SiC nanotube
Author
Song, Jiuxu ; Yang, Yintang ; Liu, Hongxia
Author_Institution
Sch. of Electron. Eng., Xi´´an Shiyou Univ., Xi´´an, China
fYear
2009
fDate
25-27 Dec. 2009
Firstpage
509
Lastpage
512
Abstract
The electronic structures and optical properties of the nitrogen doped silicon carbide nanotube (SiCNT) are studied with first principle calculation. A depression is formed near the doped nitrogen atom and the band gap of the SiCNT is narrowed by the doping. The optical properties of the SiCNT are also changed obviously.
Keywords
carbon nanotubes; nitrogen; silicon compounds; wide band gap semiconductors; SiC:N; electronic structures; first principle calculation; nitrogen atom; optical properties; Atom optics; Atomic layer deposition; Crystallization; Doping; Electrons; Microelectronics; Nitrogen; Optical sensors; Photonic band gap; Silicon carbide; SiC nanotube; electronic structures; first principle calculation; optical properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location
Xi´an
Print_ISBN
978-1-4244-4297-3
Electronic_ISBN
978-1-4244-4298-0
Type
conf
DOI
10.1109/EDSSC.2009.5394203
Filename
5394203
Link To Document