OPTODET - tool to model LWIR and MWIR region for HgCdTe photodetectors

The tool OPTODET has been developed to investigate and explain the device characteristics of p⁺-n HgCdTe Photodetector at low temperatures. In this paper the performance of narrow band gap Hg_1-xCd_xTe (x=0.225) at 78 K and wide band gap Hg_1-xCd_xTe (x=0.3) at 250 K have been analyzed. Our theoretical model considers complete Fermi-Dirac statistics and all the major recombination mechanisms. The performance of the device has been studied and simulated as a function of parameters such as doping and temperature. The dark current - voltage characteristics have been simulated and analyzed theoretically. Dark Current as low as I_D=10^-10 was obtained at 78 K. For x=0.225, a peak detectivity of 1.558 × 10¹¹ mHz^1/2/W was obtained.