Title :
Design and optimization of junction termination technology for 4H-SiC BJTs
Author :
Zhang, Qian ; YuMing Zhang ; Yimen Zhang
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
According to the operational principle of the Bipolar Junction Transistors(BJTs), comparison and optimization of two different mesa edge termination techniques on high-voltage 4H-SiC BJTs by a computer-based analysis are presented here, aiming at increasing the breakdown voltage. Based on the avalanche mechanism, the breakdown condition is first derived and then the breakdown voltage is numerically calculated. The calculation results show that various parameters including doping concentration, implantation depth and the distance from the base mesa can have great influence on the high-voltage performance.
Keywords :
avalanche breakdown; bipolar transistors; electrical engineering computing; 4H BJT; avalanche mechanism; bipolar junction transistors; breakdown voltage; computer-based analysis; doping concentration; implantation depth; junction termination design; junction termination optimization; mesa edge termination techniques; Avalanche breakdown; Breakdown voltage; Conductivity; Design methodology; Design optimization; Doping; Numerical models; Schottky diodes; Silicon carbide; Wideband; 4H-SiC; BJTs; Junction Termination Extension (JTE); breakdown; simulation;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394207
