• DocumentCode
    3224531
  • Title

    Superior contact properties of trench filled contact for 3D MOSFET

  • Author

    Jung, Jae-Hyun ; Lee, Heon-Bok ; Ha, Jong-Bong ; Kang, Hee-Sung ; Lee, Jung-Hee ; Hahm, Sung-Ho

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
  • fYear
    2009
  • fDate
    25-27 Dec. 2009
  • Firstpage
    469
  • Lastpage
    472
  • Abstract
    In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain contact resistance can be satisfied.
  • Keywords
    MOSFET; contact resistance; 3D MOSFET; ITRS requirement; elevated source-drain structure; self-aligned dual metal contact; source-drain contact resistance; trench filled contact technique; Aluminum; Conductivity; Contact resistance; Dielectric substrates; Dry etching; MOSFET circuits; Parasitic capacitance; Silicides; Silicon; Wet etching; Contact Resistance; MOSFET; Source/Drain Junction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-4297-3
  • Electronic_ISBN
    978-1-4244-4298-0
  • Type

    conf

  • DOI
    10.1109/EDSSC.2009.5394214
  • Filename
    5394214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3224531