Title :
A numerical model for solving two dimensional Poisson-Schrödinger equation in depletion all around operation of the SOI four gate transistor
Author :
Jahangir, Shafat ; Khosru, Q.D.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
A numerical model is developed for solving two dimensional Poisson-Schrodinger equation in depletion-all-around (DAA) operation of n-channel four gate transistor (G4FET) by finite element method using COMSOL with MATLAB. The results from this model can be used to calculate ballistic drain current by mode-space approach. Potential distribution, conduction band profile, eigen energy profile and wave function distribution are observed.
Keywords :
Poisson equation; Schrodinger equation; field effect transistors; finite element analysis; silicon-on-insulator; COMSOL; G4FET; MATLAB; SOI; ballistic drain current; conduction band profile; depletion-all-around operation; eigen energy profile; finite element method; mode-space approach; n-channel four gate transistor; potential distribution; two dimensional Poisson-Schrodinger equation; wave function distribution; Doping; Finite element methods; MATLAB; Mathematical model; Numerical models; Poisson equations; Semiconductor films; Silicon; Voltage; Wave functions; Four gate transistor (G4FET); depletion all around operation (DAA); finite element method; two dimensional Poisson-Schrödinger solver;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394215
